IPI60R299CP by Infineon Technologies – Specifications

Infineon Technologies IPI60R299CP is a IPI60R299CP from Infineon Technologies, part of the MOSFETs. It is designed for 600V 11A 96W 299mΩ@6.6A,10V 3.5V@440uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS. This product comes in a TO-262-3-1 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 11A
• Power Dissipation (Pd): 96W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 299mΩ@6.6A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@440uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.1nF@100V
• Total Gate Charge (Qg@Vgs): 29nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.