IPI65R110CFD by Infineon Technologies – Specifications

Infineon Technologies IPI65R110CFD is a IPI65R110CFD from Infineon Technologies, part of the MOSFETs. It is designed for 650V 31.2A 277.8W 110mΩ@12.7A,10V [email protected] 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 31.2A
  • Power Dissipation (Pd): 277.8W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@12.7A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.24nF@100V
  • Total Gate Charge (Qg@Vgs): 118nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPI65R110CFD

Model NumberIPI65R110CFD
Model NameInfineon Technologies IPI65R110CFD
CategoryMOSFETs
BrandInfineon Technologies
Description650V 31.2A 277.8W 110mΩ@12.7A,10V [email protected] 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)31.2A
Power Dissipation (Pd)277.8W
Drain Source On Resistance (RDS(on)@Vgs,Id)110mΩ@12.7A,10V
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.24nF@100V
Total Gate Charge (Qg@Vgs)118nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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