IPI65R190C by Infineon Technologies – Specifications

Infineon Technologies IPI65R190C is a IPI65R190C from Infineon Technologies, part of the MOSFETs. It is designed for 650V 20.2A 151W 190mΩ@7.3A,10V 3.5V@730uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS. This product comes in a TO-262-3-1 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 20.2A
  • Power Dissipation (Pd): 151W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@7.3A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@730uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.62nF@100V
  • Total Gate Charge (Qg@Vgs): 73nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPI65R190C

Model NumberIPI65R190C
Model NameInfineon Technologies IPI65R190C
CategoryMOSFETs
BrandInfineon Technologies
Description650V 20.2A 151W 190mΩ@7.3A,10V 3.5V@730uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3-1
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)20.2A
Power Dissipation (Pd)151W
Drain Source On Resistance (RDS(on)@Vgs,Id)190mΩ@7.3A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@730uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.62nF@100V
Total Gate Charge (Qg@Vgs)73nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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