IPI65R190C6XKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPI65R190C6XKSA1 is a IPI65R190C6XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 20.2A 151W 190mΩ@7.3A,10V 3.5V@730uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 20.2A
• Power Dissipation (Pd): 151W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@7.3A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@730uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.62nF@100V
• Total Gate Charge (Qg@Vgs): 73nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.