IPI65R380C6 by Infineon Technologies – Specifications

Infineon Technologies IPI65R380C6 is a IPI65R380C6 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 10.6A 83W 380mΩ@10V,3.2A 3.5V@320uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 10.6A
  • Power Dissipation (Pd): 83W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 380mΩ@10V,3.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@320uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPI65R380C6

Model NumberIPI65R380C6
Model NameInfineon Technologies IPI65R380C6
CategoryMOSFETs
BrandInfineon Technologies
Description650V 10.6A 83W 380mΩ@10V,3.2A 3.5V@320uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)10.6A
Power Dissipation (Pd)83W
Drain Source On Resistance (RDS(on)@Vgs,Id)380mΩ@10V,3.2A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@320uA
Type1PCSNChannel

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