Infineon Technologies IPI65R420CFD is a IPI65R420CFD from Infineon Technologies, part of the MOSFETs. It is designed for 650V 8.7A 420mΩ@3.4A,10V 83.3W 4.5V@300uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS. This product comes in a TO-262-3-1 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 8.7A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 420mΩ@3.4A,10V
- Power Dissipation (Pd): 83.3W
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@300uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 870pF@100V
- Total Gate Charge (Qg@Vgs): 31.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPI65R420CFD
Full Specifications of IPI65R420CFD
Model Number | IPI65R420CFD |
Model Name | Infineon Technologies IPI65R420CFD |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 650V 8.7A 420mΩ@3.4A,10V 83.3W 4.5V@300uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-262-3-1 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 650V |
Continuous Drain Current (Id) | 8.7A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 420mΩ@3.4A,10V |
Power Dissipation (Pd) | 83.3W |
Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@300uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 870pF@100V |
Total Gate Charge (Qg@Vgs) | 31.5nC@10V |
Operating Temperature | -55℃~+150℃@(Tj) |
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