IPI65R660CFD by Infineon Technologies – Specifications

Infineon Technologies IPI65R660CFD is a IPI65R660CFD from Infineon Technologies, part of the MOSFETs. It is designed for 650V 6A 660mΩ@2.1A,10V 62.5W 4.5V@200uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 6A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 660mΩ@2.1A,10V
• Power Dissipation (Pd): 62.5W
• Gate Threshold Voltage (Vgs(th)@Id): 4.5V@200uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 615pF@100V
• Total Gate Charge (Qg@Vgs): 22nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.