IPI80N03S4L-03 by Infineon Technologies – Specifications

Infineon Technologies IPI80N03S4L-03 is a IPI80N03S4L-03 from Infineon Technologies, part of the MOSFETs. It is designed for 30V 80A 136W 2.7mΩ@80A,10V 2.2V@90uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS. This product comes in a TO-262-3-1 package and is sold as Bag-packed. Key features include:

• Drain Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 80A
• Power Dissipation (Pd): 136W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 2.7mΩ@80A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 2.2V@90uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 9.75nF@25V
• Total Gate Charge (Qg@Vgs): 140nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.