IPI80N06S207AKSA2 by Infineon Technologies – Specifications

Infineon Technologies IPI80N06S207AKSA2 is a IPI80N06S207AKSA2 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 80A 250W 6.6mΩ@68A,10V 4V@180uA 1PCSNChannel TO-262-3-1 MOSFETs ROHS. This product comes in a TO-262-3-1 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 55V
• Continuous Drain Current (Id): 80A
• Power Dissipation (Pd): 250W
• Drain Source On Resistance (RDS(on)@Vgs,Id): 6.6mΩ@68A,10V
• Gate Threshold Voltage (Vgs(th)@Id): 4V@180uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 3.4nF@25V
• Total Gate Charge (Qg@Vgs): 110nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.