IPI80N06S208AKSA2 by Infineon Technologies – Specifications

Infineon Technologies IPI80N06S208AKSA2 is a IPI80N06S208AKSA2 from Infineon Technologies, part of the MOSFETs. It is designed for 55V 80A 215W 8mΩ@58A,10V 4V@150uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 215W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@58A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@150uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.86nF@25V
  • Total Gate Charge (Qg@Vgs): 96nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPI80N06S208AKSA2

Model NumberIPI80N06S208AKSA2
Model NameInfineon Technologies IPI80N06S208AKSA2
CategoryMOSFETs
BrandInfineon Technologies
Description55V 80A 215W 8mΩ@58A,10V 4V@150uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)55V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)215W
Drain Source On Resistance (RDS(on)@Vgs,Id)8mΩ@58A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@150uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.86nF@25V
Total Gate Charge (Qg@Vgs)96nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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