IPI80N06S4L-07 by Infineon Technologies – Specifications

Infineon Technologies IPI80N06S4L-07 is a IPI80N06S4L-07 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 80A 6.7mΩ@10V,80A 79W 2.2V@40uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.7mΩ@10V,80A
  • Power Dissipation (Pd): 79W
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@40uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPI80N06S4L-07

Full Specifications of IPI80N06S4L-07

Model NumberIPI80N06S4L-07
Model NameInfineon Technologies IPI80N06S4L-07
CategoryMOSFETs
BrandInfineon Technologies
Description60V 80A 6.7mΩ@10V,80A 79W 2.2V@40uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.7mΩ@10V,80A
Power Dissipation (Pd)79W
Gate Threshold Voltage (Vgs(th)@Id)2.2V@40uA
Type1PCSNChannel

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