IPI90R1K0C3 by Infineon Technologies – Specifications

Infineon Technologies IPI90R1K0C3 is a IPI90R1K0C3 from Infineon Technologies, part of the MOSFETs. It is designed for 900V 5.7A 1Ω@3.3A,10V 89W 3.5V@370uA 1PCSNChannel TO-262-3 MOSFETs ROHS. This product comes in a TO-262-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 900V
  • Continuous Drain Current (Id): 5.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1Ω@3.3A,10V
  • Power Dissipation (Pd): 89W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@370uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 850pF@100V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPI90R1K0C3

Model NumberIPI90R1K0C3
Model NameInfineon Technologies IPI90R1K0C3
CategoryMOSFETs
BrandInfineon Technologies
Description900V 5.7A 1Ω@3.3A,10V 89W 3.5V@370uA 1PCSNChannel TO-262-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-262-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)900V
Continuous Drain Current (Id)5.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)1Ω@3.3A,10V
Power Dissipation (Pd)89W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@370uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)850pF@100V
Operating Temperature-55℃~+150℃@(Tj)

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