IPL60R1K5C6SATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPL60R1K5C6SATMA1 is a IPL60R1K5C6SATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 3A 26.6W 1.5Ω@1.1A,10V 3.5V@90uA 1PCSNChannel ThinPAk-8(5x6) MOSFETs ROHS. This product comes in a ThinPAk-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 3A
  • Power Dissipation (Pd): 26.6W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5Ω@1.1A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@90uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 200pF@100V
  • Total Gate Charge (Qg@Vgs): 9.4nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IPL60R1K5C6SATMA1

Model NumberIPL60R1K5C6SATMA1
Model NameInfineon Technologies IPL60R1K5C6SATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 3A 26.6W 1.5Ω@1.1A,10V 3.5V@90uA 1PCSNChannel ThinPAk-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseThinPAk-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)3A
Power Dissipation (Pd)26.6W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.5Ω@1.1A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@90uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)200pF@100V
Total Gate Charge (Qg@Vgs)9.4nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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