IPL60R360P6SATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPL60R360P6SATMA1 is a IPL60R360P6SATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 11.3A 360mΩ@4.5A,10V 89.3W 4.5V@370uA 1PCSNChannel ThinPAK-8(5x6) MOSFETs ROHS. This product comes in a ThinPAK-8(5x6) package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 11.3A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 360mΩ@4.5A,10V
  • Power Dissipation (Pd): 89.3W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@370uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.01nF@100V
  • Total Gate Charge (Qg@Vgs): 22nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.9 grams.

Full Specifications of IPL60R360P6SATMA1

Model NumberIPL60R360P6SATMA1
Model NameInfineon Technologies IPL60R360P6SATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 11.3A 360mΩ@4.5A,10V 89.3W 4.5V@370uA 1PCSNChannel ThinPAK-8(5x6) MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.900 grams / 0.031747 oz
Package / CaseThinPAK-8(5x6)
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)11.3A
Drain Source On Resistance (RDS(on)@Vgs,Id)360mΩ@4.5A,10V
Power Dissipation (Pd)89.3W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@370uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.01nF@100V
Total Gate Charge (Qg@Vgs)22nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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