IPL65R1K5C6SATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPL65R1K5C6SATMA1 is a IPL65R1K5C6SATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 3A 1.5Ω@1A,10V 26.6W 3.5V@100uA 1PCSNChannel TSON-8-EP(5x6) MOSFETs ROHS. This product comes in a TSON-8-EP(5x6) package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 650V
• Continuous Drain Current (Id): 3A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5Ω@1A,10V
• Power Dissipation (Pd): 26.6W
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@100uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 225pF@100V
• Total Gate Charge (Qg@Vgs): 11nC@10V
• Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.