IPN50R2K0CEATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPN50R2K0CEATMA1 is a IPN50R2K0CEATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 500V 3.6A 5W 2Ω@600mA,13V 3.5V@50uA 1PCSNChannel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 3.6A
  • Power Dissipation (Pd): 5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@600mA,13V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@50uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 124pF@100V
  • Total Gate Charge (Qg@Vgs): 6nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.55 grams.

More on IPN50R2K0CEATMA1

Full Specifications of IPN50R2K0CEATMA1

Model NumberIPN50R2K0CEATMA1
Model NameInfineon Technologies IPN50R2K0CEATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description500V 3.6A 5W 2Ω@600mA,13V 3.5V@50uA 1PCSNChannel SOT-223-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.550 grams / 0.019401 oz
Package / CaseSOT-223-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)3.6A
Power Dissipation (Pd)5W
Drain Source On Resistance (RDS(on)@Vgs,Id)2Ω@600mA,13V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@50uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)124pF@100V
Total Gate Charge (Qg@Vgs)6nC@10V
Operating Temperature-40℃~+150℃@(Tj)

Compare Infineon Technologies - IPN50R2K0CEATMA1 With Other 200 Models

Related Models - IPN50R2K0CEATMA1 Alternative

Scroll to Top