IPN50R3K0CE by Infineon Technologies – Specifications

Infineon Technologies IPN50R3K0CE is a IPN50R3K0CE from Infineon Technologies, part of the MOSFETs. It is designed for 500V 2.6A 3Ω@13V,400mA 5W 3.5V@30uA N Channel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 2.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3Ω@13V,400mA
  • Power Dissipation (Pd): 5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@30uA
  • Type: N Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPN50R3K0CE

Model NumberIPN50R3K0CE
Model NameInfineon Technologies IPN50R3K0CE
CategoryMOSFETs
BrandInfineon Technologies
Description500V 2.6A 3Ω@13V,400mA 5W 3.5V@30uA N Channel SOT-223-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-223-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)2.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)3Ω@13V,400mA
Power Dissipation (Pd)5W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@30uA
TypeN Channel

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