IPN50R800CEATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPN50R800CEATMA1 is a IPN50R800CEATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 500V 7.6A 800mΩ@1.5A,13V 5W 3.5V@130uA 1PCSNChannel SOT-223 MOSFETs ROHS. This product comes in a SOT-223 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 7.6A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 800mΩ@1.5A,13V
  • Power Dissipation (Pd): 5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@130uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 280pF@100V
  • Total Gate Charge (Qg@Vgs): 12.4nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.4 grams.

More on IPN50R800CEATMA1

Full Specifications of IPN50R800CEATMA1

Model NumberIPN50R800CEATMA1
Model NameInfineon Technologies IPN50R800CEATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description500V 7.6A 800mΩ@1.5A,13V 5W 3.5V@130uA 1PCSNChannel SOT-223 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.400 grams / 0.01411 oz
Package / CaseSOT-223
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)7.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)800mΩ@1.5A,13V
Power Dissipation (Pd)5W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@130uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)280pF@100V
Total Gate Charge (Qg@Vgs)12.4nC@10V
Operating Temperature-40℃~+150℃@(Tj)

Compare Infineon Technologies - IPN50R800CEATMA1 With Other 200 Models

Related Models - IPN50R800CEATMA1 Alternative

Scroll to Top