IPN60R1K0CE by Infineon Technologies – Specifications

Infineon Technologies IPN60R1K0CE is a IPN60R1K0CE from Infineon Technologies, part of the MOSFETs. It is designed for 600V 6.8A 5W 1Ω@10V,1.5A 3.5V@130uA 1PCSNChannel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 6.8A
  • Power Dissipation (Pd): 5W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1Ω@10V,1.5A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@130uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPN60R1K0CE

Model NumberIPN60R1K0CE
Model NameInfineon Technologies IPN60R1K0CE
CategoryMOSFETs
BrandInfineon Technologies
Description600V 6.8A 5W 1Ω@10V,1.5A 3.5V@130uA 1PCSNChannel SOT-223-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseSOT-223-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCN-
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)6.8A
Power Dissipation (Pd)5W
Drain Source On Resistance (RDS(on)@Vgs,Id)1Ω@10V,1.5A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@130uA
Type1PCSNChannel

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