IPN60R1K0CEATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPN60R1K0CEATMA1 is a IPN60R1K0CEATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 6.8A 1Ω@1.5A,10V 5W 3.5V@130uA 1PCSNChannel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:

• Drain Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 6.8A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 1Ω@1.5A,10V
• Power Dissipation (Pd): 5W
• Gate Threshold Voltage (Vgs(th)@Id): 3.5V@130uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 280pF@100V
• Total Gate Charge (Qg@Vgs): 13nC@10V
• Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.