IPN60R1K5PFD7SATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPN60R1K5PFD7SATMA1 is a IPN60R1K5PFD7SATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 3.6A 6W 1.5Ω@700mA,10V 4.5V@40uA 1PCSNChannel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 3.6A
  • Power Dissipation (Pd): 6W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5Ω@700mA,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@40uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 169pF@400V
  • Total Gate Charge (Qg@Vgs): 4.6nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.5 grams.

More on IPN60R1K5PFD7SATMA1

Full Specifications of IPN60R1K5PFD7SATMA1

Model NumberIPN60R1K5PFD7SATMA1
Model NameInfineon Technologies IPN60R1K5PFD7SATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 3.6A 6W 1.5Ω@700mA,10V 4.5V@40uA 1PCSNChannel SOT-223-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.500 grams / 0.017637 oz
Package / CaseSOT-223-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)3.6A
Power Dissipation (Pd)6W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.5Ω@700mA,10V
Gate Threshold Voltage (Vgs(th)@Id)4.5V@40uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)169pF@400V
Total Gate Charge (Qg@Vgs)4.6nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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