IPN60R2K1CEATMA1 by Infineon Technologies – Specifications

Infineon Technologies IPN60R2K1CEATMA1 is a IPN60R2K1CEATMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 3.7A 2.1Ω@800mA,10V 5W 3.5V@60uA 1PCSNChannel SOT-223-3 MOSFETs ROHS. This product comes in a SOT-223-3 package and is sold as Tape & Reel (TR). Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 3.7A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.1Ω@800mA,10V
  • Power Dissipation (Pd): 5W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@60uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 140pF@100V
  • Total Gate Charge (Qg@Vgs): 6.7nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 0.297 grams.

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Full Specifications of IPN60R2K1CEATMA1

Model NumberIPN60R2K1CEATMA1
Model NameInfineon Technologies IPN60R2K1CEATMA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 3.7A 2.1Ω@800mA,10V 5W 3.5V@60uA 1PCSNChannel SOT-223-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:0.297 grams / 0.010476 oz
Package / CaseSOT-223-3
Package / ArrangeTape & Reel (TR)
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)3.7A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.1Ω@800mA,10V
Power Dissipation (Pd)5W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@60uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)140pF@100V
Total Gate Charge (Qg@Vgs)6.7nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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