IPP015N04NGXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP015N04NGXKSA1 is a IPP015N04NGXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 120A 250W 1.5mΩ@100A,10V 4V@200uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 120A
  • Power Dissipation (Pd): 250W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.5mΩ@100A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@200uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 20nF@20V
  • Total Gate Charge (Qg@Vgs): 250nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.9 grams.

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Full Specifications of IPP015N04NGXKSA1

Model NumberIPP015N04NGXKSA1
Model NameInfineon Technologies IPP015N04NGXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 120A 250W 1.5mΩ@100A,10V 4V@200uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.900 grams / 0.102295 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)120A
Power Dissipation (Pd)250W
Drain Source On Resistance (RDS(on)@Vgs,Id)1.5mΩ@100A,10V
Gate Threshold Voltage (Vgs(th)@Id)4V@200uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)20nF@20V
Total Gate Charge (Qg@Vgs)250nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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