IPP023N04NGXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP023N04NGXKSA1 is a IPP023N04NGXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 90A 2.3mΩ@90A,10V 167W 4V@95uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 40V
• Continuous Drain Current (Id): 90A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 2.3mΩ@90A,10V
• Power Dissipation (Pd): 167W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@95uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 10nF@20V
• Total Gate Charge (Qg@Vgs): 120nC@10V
• Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.