IPP024N06N3 G by Infineon Technologies – Specifications

Infineon Technologies IPP024N06N3 G is a IPP024N06N3 G from Infineon Technologies, part of the MOSFETs. It is designed for 60V 120A 2.4mΩ@10V,100A 250W 4V@196uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.4mΩ@10V,100A
  • Power Dissipation (Pd): 250W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@196uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 23nF@30V
  • Total Gate Charge (Qg@Vgs): 275nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.88 grams.

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Full Specifications of IPP024N06N3 G

Model NumberIPP024N06N3 G
Model NameInfineon Technologies IPP024N06N3 G
CategoryMOSFETs
BrandInfineon Technologies
Description60V 120A 2.4mΩ@10V,100A 250W 4V@196uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.880 grams / 0.101589 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.4mΩ@10V,100A
Power Dissipation (Pd)250W
Gate Threshold Voltage (Vgs(th)@Id)4V@196uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)23nF@30V
Total Gate Charge (Qg@Vgs)275nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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