IPP024N06N3G by Infineon Technologies – Specifications

Infineon Technologies IPP024N06N3G is a IPP024N06N3G from Infineon Technologies, part of the MOSFETs. It is designed for 60V 120A 2.4mΩ@10V,100A 250W 4V@196uA N Channel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 120A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2.4mΩ@10V,100A
  • Power Dissipation (Pd): 250W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@196uA
  • Type: N Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

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Full Specifications of IPP024N06N3G

Model NumberIPP024N06N3G
Model NameInfineon Technologies IPP024N06N3G
CategoryMOSFETs
BrandInfineon Technologies
Description60V 120A 2.4mΩ@10V,100A 250W 4V@196uA N Channel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)120A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.4mΩ@10V,100A
Power Dissipation (Pd)250W
Gate Threshold Voltage (Vgs(th)@Id)4V@196uA
TypeN Channel

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