IPP033N04NF2SAKMA1 by Infineon Technologies – Specifications

Infineon Technologies IPP033N04NF2SAKMA1 is a IPP033N04NF2SAKMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 40V 3.3mΩ@70A,10V 3.4V@53uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 25A;113A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.3mΩ@70A,10V
  • Power Dissipation (Pd): 3.8W;107W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.4V@53uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.2nF@20V
  • Total Gate Charge (Qg@Vgs): 68nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPP033N04NF2SAKMA1

Full Specifications of IPP033N04NF2SAKMA1

Model NumberIPP033N04NF2SAKMA1
Model NameInfineon Technologies IPP033N04NF2SAKMA1
CategoryMOSFETs
BrandInfineon Technologies
Description40V 3.3mΩ@70A,10V 3.4V@53uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)25A;113A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.3mΩ@70A,10V
Power Dissipation (Pd)3.8W;107W
Gate Threshold Voltage (Vgs(th)@Id)3.4V@53uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.2nF@20V
Total Gate Charge (Qg@Vgs)68nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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