IPP034NE7N3 G by Infineon Technologies – Specifications

Infineon Technologies IPP034NE7N3 G is a IPP034NE7N3 G from Infineon Technologies, part of the MOSFETs. It is designed for 75V 100A 3.4mΩ@10V,100A 214W 3.8V@155uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 3.4mΩ@10V,100A
  • Power Dissipation (Pd): 214W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@155uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.9 grams.

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Full Specifications of IPP034NE7N3 G

Model NumberIPP034NE7N3 G
Model NameInfineon Technologies IPP034NE7N3 G
CategoryMOSFETs
BrandInfineon Technologies
Description75V 100A 3.4mΩ@10V,100A 214W 3.8V@155uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.900 grams / 0.102295 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.4mΩ@10V,100A
Power Dissipation (Pd)214W
Gate Threshold Voltage (Vgs(th)@Id)3.8V@155uA
Type1PCSNChannel

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