IPP048N04N G by Infineon Technologies – Specifications

Infineon Technologies IPP048N04N G is a IPP048N04N G from Infineon Technologies, part of the MOSFETs. It is designed for 40V 70A 4mΩ@10V,70A 79W 4V@200uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 70A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4mΩ@10V,70A
  • Power Dissipation (Pd): 79W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@200uA
  • Reverse Transfer Capacitance (Crss@Vds): 27pF@20V
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.5nF@20V
  • Total Gate Charge (Qg@Vgs): 31nC@0~10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.007 grams.

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Full Specifications of IPP048N04N G

Model NumberIPP048N04N G
Model NameInfineon Technologies IPP048N04N G
CategoryMOSFETs
BrandInfineon Technologies
Description40V 70A 4mΩ@10V,70A 79W 4V@200uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.007 grams / 0.106069 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)40V
Continuous Drain Current (Id)70A
Drain Source On Resistance (RDS(on)@Vgs,Id)4mΩ@10V,70A
Power Dissipation (Pd)79W
Gate Threshold Voltage (Vgs(th)@Id)4V@200uA
Reverse Transfer Capacitance (Crss@Vds)27pF@20V
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.5nF@20V
Total Gate Charge (Qg@Vgs)31nC@0~10V
Operating Temperature-55℃~+175℃@(Tj)

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