IPP04CN10N G by Infineon Technologies – Specifications

Infineon Technologies IPP04CN10N G is a IPP04CN10N G from Infineon Technologies, part of the MOSFETs. It is designed for 100V 100A 300W 4.2mΩ@10V,100A 4V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 300W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2mΩ@10V,100A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPP04CN10N G

Model NumberIPP04CN10N G
Model NameInfineon Technologies IPP04CN10N G
CategoryMOSFETs
BrandInfineon Technologies
Description100V 100A 300W 4.2mΩ@10V,100A 4V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)100A
Power Dissipation (Pd)300W
Drain Source On Resistance (RDS(on)@Vgs,Id)4.2mΩ@10V,100A
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Type1PCSNChannel

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