IPP055N08NF2SAKMA1 by Infineon Technologies – Specifications

Infineon Technologies IPP055N08NF2SAKMA1 is a IPP055N08NF2SAKMA1 from Infineon Technologies, part of the MOSFETs. It is designed for 80V 5.5mΩ@60A,10V 3.8V@55uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 18.5A;99A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 5.5mΩ@60A,10V
  • Power Dissipation (Pd): 3.8W;107W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@55uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.5nF@40V
  • Total Gate Charge (Qg@Vgs): 54nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.05 grams.

More on IPP055N08NF2SAKMA1

Full Specifications of IPP055N08NF2SAKMA1

Model NumberIPP055N08NF2SAKMA1
Model NameInfineon Technologies IPP055N08NF2SAKMA1
CategoryMOSFETs
BrandInfineon Technologies
Description80V 5.5mΩ@60A,10V 3.8V@55uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.050 grams / 0.072312 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)80V
Continuous Drain Current (Id)18.5A;99A
Drain Source On Resistance (RDS(on)@Vgs,Id)5.5mΩ@60A,10V
Power Dissipation (Pd)3.8W;107W
Gate Threshold Voltage (Vgs(th)@Id)3.8V@55uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.5nF@40V
Total Gate Charge (Qg@Vgs)54nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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