IPP062NE7N3GXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP062NE7N3GXKSA1 is a IPP062NE7N3GXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 75V 80A 136W 6.2mΩ@73A,10V 3.8V@70uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 80A
  • Power Dissipation (Pd): 136W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.2mΩ@73A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 3.8V@70uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): [email protected]
  • Total Gate Charge (Qg@Vgs): 55nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPP062NE7N3GXKSA1

Model NumberIPP062NE7N3GXKSA1
Model NameInfineon Technologies IPP062NE7N3GXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description75V 80A 136W 6.2mΩ@73A,10V 3.8V@70uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)80A
Power Dissipation (Pd)136W
Drain Source On Resistance (RDS(on)@Vgs,Id)6.2mΩ@73A,10V
Gate Threshold Voltage (Vgs(th)@Id)3.8V@70uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)[email protected]
Total Gate Charge (Qg@Vgs)55nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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