IPP085N06LGIN by Infineon Technologies – Specifications

Infineon Technologies IPP085N06LGIN is a IPP085N06LGIN from Infineon Technologies, part of the MOSFETs. It is designed for 60V 80A 8.5mΩ@80A,10V 188W 2V@125uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.5mΩ@80A,10V
  • Power Dissipation (Pd): 188W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@125uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.5nF@30V
  • Total Gate Charge (Qg@Vgs): 104nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

Full Specifications of IPP085N06LGIN

Model NumberIPP085N06LGIN
Model NameInfineon Technologies IPP085N06LGIN
CategoryMOSFETs
BrandInfineon Technologies
Description60V 80A 8.5mΩ@80A,10V 188W 2V@125uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.5mΩ@80A,10V
Power Dissipation (Pd)188W
Gate Threshold Voltage (Vgs(th)@Id)2V@125uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.5nF@30V
Total Gate Charge (Qg@Vgs)104nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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