IPP086N10N3 by Infineon Technologies – Specifications

Infineon Technologies IPP086N10N3 is a IPP086N10N3 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 80A 8.6mΩ@73A,10V 125W 3.5V@75uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 80A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8.6mΩ@73A,10V
  • Power Dissipation (Pd): 125W
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@75uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.98nF@50V
  • Total Gate Charge (Qg@Vgs): 55nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPP086N10N3

Model NumberIPP086N10N3
Model NameInfineon Technologies IPP086N10N3
CategoryMOSFETs
BrandInfineon Technologies
Description100V 80A 8.6mΩ@73A,10V 125W 3.5V@75uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)80A
Drain Source On Resistance (RDS(on)@Vgs,Id)8.6mΩ@73A,10V
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)3.5V@75uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.98nF@50V
Total Gate Charge (Qg@Vgs)55nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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