IPP100N08S2L07AKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP100N08S2L07AKSA1 is a IPP100N08S2L07AKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 75V 100A 6.8mΩ@80A,10V 300W 2V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 75V
  • Continuous Drain Current (Id): 100A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.8mΩ@80A,10V
  • Power Dissipation (Pd): 300W
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 5.4nF@25V
  • Total Gate Charge (Qg@Vgs): 246nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPP100N08S2L07AKSA1

Full Specifications of IPP100N08S2L07AKSA1

Model NumberIPP100N08S2L07AKSA1
Model NameInfineon Technologies IPP100N08S2L07AKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description75V 100A 6.8mΩ@80A,10V 300W 2V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)75V
Continuous Drain Current (Id)100A
Drain Source On Resistance (RDS(on)@Vgs,Id)6.8mΩ@80A,10V
Power Dissipation (Pd)300W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)5.4nF@25V
Total Gate Charge (Qg@Vgs)246nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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