IPP114N03LG by Infineon Technologies – Specifications

Infineon Technologies IPP114N03LG is a IPP114N03LG from Infineon Technologies, part of the MOSFETs. It is designed for 30V 30A 38W 11.4mΩ@30A,10V 2.2V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:

  • Drain Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 30A
  • Power Dissipation (Pd): 38W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 11.4mΩ@30A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.5nF@15V
  • Total Gate Charge (Qg@Vgs): 14nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPP114N03LG

Model NumberIPP114N03LG
Model NameInfineon Technologies IPP114N03LG
CategoryMOSFETs
BrandInfineon Technologies
Description30V 30A 38W 11.4mΩ@30A,10V 2.2V@250uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeBag-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)30A
Power Dissipation (Pd)38W
Drain Source On Resistance (RDS(on)@Vgs,Id)11.4mΩ@30A,10V
Gate Threshold Voltage (Vgs(th)@Id)2.2V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.5nF@15V
Total Gate Charge (Qg@Vgs)14nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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