IPP16CN10NGXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP16CN10NGXKSA1 is a IPP16CN10NGXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 100V 53A 100W 16.5mΩ@10V,53A 4V@61uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 53A
  • Power Dissipation (Pd): 100W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 16.5mΩ@10V,53A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@61uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 3.22nF@50V
  • Total Gate Charge (Qg@Vgs): 48nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

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Full Specifications of IPP16CN10NGXKSA1

Model NumberIPP16CN10NGXKSA1
Model NameInfineon Technologies IPP16CN10NGXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description100V 53A 100W 16.5mΩ@10V,53A 4V@61uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)100V
Continuous Drain Current (Id)53A
Power Dissipation (Pd)100W
Drain Source On Resistance (RDS(on)@Vgs,Id)16.5mΩ@10V,53A
Gate Threshold Voltage (Vgs(th)@Id)4V@61uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)3.22nF@50V
Total Gate Charge (Qg@Vgs)48nC@10V
Operating Temperature-55℃~+175℃@(Tj)

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