IPP200N15N3GXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP200N15N3GXKSA1 is a IPP200N15N3GXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 150V 50A 150W 20mΩ@10V,50A 4V@90uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 50A
  • Power Dissipation (Pd): 150W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@10V,50A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@90uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

More on IPP200N15N3GXKSA1

Full Specifications of IPP200N15N3GXKSA1

Model NumberIPP200N15N3GXKSA1
Model NameInfineon Technologies IPP200N15N3GXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description150V 50A 150W 20mΩ@10V,50A 4V@90uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)50A
Power Dissipation (Pd)150W
Drain Source On Resistance (RDS(on)@Vgs,Id)20mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)@Id)4V@90uA
Type1PCSNChannel

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