Infineon Technologies IPP230N06L3GXKSA1 is a IPP230N06L3GXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 60V 30A 36W 23mΩ@30A,10V 2.2V@11uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Bag-packed. Key features include:
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 30A
- Power Dissipation (Pd): 36W
- Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@30A,10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@11uA
- Type: 1PCSNChannel
- Input Capacitance (Ciss@Vds): 1.2nF@30V
- Total Gate Charge (Qg@Vgs): [email protected]
- Operating Temperature: -55℃~+175℃
Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.
More on IPP230N06L3GXKSA1
Full Specifications of IPP230N06L3GXKSA1
Model Number | IPP230N06L3GXKSA1 |
Model Name | Infineon Technologies IPP230N06L3GXKSA1 |
Category | MOSFETs |
Brand | Infineon Technologies |
Description | 60V 30A 36W 23mΩ@30A,10V 2.2V@11uA 1PCSNChannel TO-220-3 MOSFETs ROHS |
RoHS | Lead free / RoHS Compliant |
Unit | Piece |
Weight: | 1.000 grams / 0.035274 oz |
Package / Case | TO-220-3 |
Package / Arrange | Bag-packed |
Battery | No |
ECCN | EAR99 |
Drain Source Voltage (Vdss) | 60V |
Continuous Drain Current (Id) | 30A |
Power Dissipation (Pd) | 36W |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 23mΩ@30A,10V |
Gate Threshold Voltage (Vgs(th)@Id) | 2.2V@11uA |
Type | 1PCSNChannel |
Input Capacitance (Ciss@Vds) | 1.2nF@30V |
Total Gate Charge (Qg@Vgs) | [email protected] |
Operating Temperature | -55℃~+175℃ |
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