IPP50R199CP by Infineon Technologies – Specifications

Infineon Technologies IPP50R199CP is a IPP50R199CP from Infineon Technologies, part of the MOSFETs. It is designed for 550V 17A 139W 199mΩ@10V,9.9A 3.5V@660uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 550V
  • Continuous Drain Current (Id): 17A
  • Power Dissipation (Pd): 139W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 199mΩ@10V,9.9A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@660uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPP50R199CP

Full Specifications of IPP50R199CP

Model NumberIPP50R199CP
Model NameInfineon Technologies IPP50R199CP
CategoryMOSFETs
BrandInfineon Technologies
Description550V 17A 139W 199mΩ@10V,9.9A 3.5V@660uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)550V
Continuous Drain Current (Id)17A
Power Dissipation (Pd)139W
Drain Source On Resistance (RDS(on)@Vgs,Id)199mΩ@10V,9.9A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@660uA
Type1PCSNChannel

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