IPP50R299CP by Infineon Technologies – Specifications

Infineon Technologies IPP50R299CP is a IPP50R299CP from Infineon Technologies, part of the MOSFETs. It is designed for 550V 12A 104W 299mΩ@10V,6.6A 3.5V@440uA N Channel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 550V
  • Continuous Drain Current (Id): 12A
  • Power Dissipation (Pd): 104W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 299mΩ@10V,6.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@440uA
  • Type: N Channel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

More on IPP50R299CP

Full Specifications of IPP50R299CP

Model NumberIPP50R299CP
Model NameInfineon Technologies IPP50R299CP
CategoryMOSFETs
BrandInfineon Technologies
Description550V 12A 104W 299mΩ@10V,6.6A 3.5V@440uA N Channel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)550V
Continuous Drain Current (Id)12A
Power Dissipation (Pd)104W
Drain Source On Resistance (RDS(on)@Vgs,Id)299mΩ@10V,6.6A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@440uA
TypeN Channel

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