IPP50R520CP by Infineon Technologies – Specifications

Infineon Technologies IPP50R520CP is a IPP50R520CP from Infineon Technologies, part of the MOSFETs. It is designed for 500V 7.1A 66W 520mΩ@10V,3.8A 3.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 500V
  • Continuous Drain Current (Id): 7.1A
  • Power Dissipation (Pd): 66W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 520mΩ@10V,3.8A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 680pF@100V
  • Total Gate Charge (Qg@Vgs): 17nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.82 grams.

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Full Specifications of IPP50R520CP

Model NumberIPP50R520CP
Model NameInfineon Technologies IPP50R520CP
CategoryMOSFETs
BrandInfineon Technologies
Description500V 7.1A 66W 520mΩ@10V,3.8A 3.5V@250uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.820 grams / 0.099473 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)500V
Continuous Drain Current (Id)7.1A
Power Dissipation (Pd)66W
Drain Source On Resistance (RDS(on)@Vgs,Id)520mΩ@10V,3.8A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@250uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)680pF@100V
Total Gate Charge (Qg@Vgs)17nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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