IPP530N15N3GXKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP530N15N3GXKSA1 is a IPP530N15N3GXKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 150V 21A 53mΩ@18A,10V 68W 4V@35uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 21A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 53mΩ@18A,10V
  • Power Dissipation (Pd): 68W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@35uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 887pF@75V
  • Total Gate Charge (Qg@Vgs): 12nC@10V
  • Operating Temperature: -55℃~+175℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPP530N15N3GXKSA1

Full Specifications of IPP530N15N3GXKSA1

Model NumberIPP530N15N3GXKSA1
Model NameInfineon Technologies IPP530N15N3GXKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description150V 21A 53mΩ@18A,10V 68W 4V@35uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)150V
Continuous Drain Current (Id)21A
Drain Source On Resistance (RDS(on)@Vgs,Id)53mΩ@18A,10V
Power Dissipation (Pd)68W
Gate Threshold Voltage (Vgs(th)@Id)4V@35uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)887pF@75V
Total Gate Charge (Qg@Vgs)12nC@10V
Operating Temperature-55℃~+175℃@(Tj)

Compare Infineon Technologies - IPP530N15N3GXKSA1 With Other 200 Models

Related Models - IPP530N15N3GXKSA1 Alternative

Scroll to Top