IPP60R080P7 by Infineon Technologies – Specifications

Infineon Technologies IPP60R080P7 is a IPP60R080P7 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 37A 80mΩ@10V,11.8A 129W 4V@590uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 37A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 80mΩ@10V,11.8A
  • Power Dissipation (Pd): 129W
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@590uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPP60R080P7

Full Specifications of IPP60R080P7

Model NumberIPP60R080P7
Model NameInfineon Technologies IPP60R080P7
CategoryMOSFETs
BrandInfineon Technologies
Description650V 37A 80mΩ@10V,11.8A 129W 4V@590uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)37A
Drain Source On Resistance (RDS(on)@Vgs,Id)80mΩ@10V,11.8A
Power Dissipation (Pd)129W
Gate Threshold Voltage (Vgs(th)@Id)4V@590uA
Type1PCSNChannel

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