IPP60R120C7XKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP60R120C7XKSA1 is a IPP60R120C7XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 19A 120mΩ@7.8A,10V 92W 4V@390uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

• Drain Source Voltage (Vdss): 600V
• Continuous Drain Current (Id): 19A
• Drain Source On Resistance (RDS(on)@Vgs,Id): 120mΩ@7.8A,10V
• Power Dissipation (Pd): 92W
• Gate Threshold Voltage (Vgs(th)@Id): 4V@390uA
• Type: 1PCSNChannel
• Input Capacitance (Ciss@Vds): 1.5nF@400V
• Total Gate Charge (Qg@Vgs): 34nC@10V
• Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.