IPP60R165CP by Infineon Technologies – Specifications

Infineon Technologies IPP60R165CP is a IPP60R165CP from Infineon Technologies, part of the MOSFETs. It is designed for 650V 21A 192W 165mΩ@10V,16A 3.5V@790uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 21A
  • Power Dissipation (Pd): 192W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 165mΩ@10V,16A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@790uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.64 grams.

More on IPP60R165CP

Full Specifications of IPP60R165CP

Model NumberIPP60R165CP
Model NameInfineon Technologies IPP60R165CP
CategoryMOSFETs
BrandInfineon Technologies
Description650V 21A 192W 165mΩ@10V,16A 3.5V@790uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.640 grams / 0.093123 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)21A
Power Dissipation (Pd)192W
Drain Source On Resistance (RDS(on)@Vgs,Id)165mΩ@10V,16A
Gate Threshold Voltage (Vgs(th)@Id)3.5V@790uA
Type1PCSNChannel

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