IPP60R210CFD7XKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP60R210CFD7XKSA1 is a IPP60R210CFD7XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 600V 12A 210mΩ@4.9A,10V 64W 4.5V@240uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 12A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 210mΩ@4.9A,10V
  • Power Dissipation (Pd): 64W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@240uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 1.015nF@400V
  • Total Gate Charge (Qg@Vgs): 23nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

More on IPP60R210CFD7XKSA1

Full Specifications of IPP60R210CFD7XKSA1

Model NumberIPP60R210CFD7XKSA1
Model NameInfineon Technologies IPP60R210CFD7XKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description600V 12A 210mΩ@4.9A,10V 64W 4.5V@240uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)12A
Drain Source On Resistance (RDS(on)@Vgs,Id)210mΩ@4.9A,10V
Power Dissipation (Pd)64W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@240uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)1.015nF@400V
Total Gate Charge (Qg@Vgs)23nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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