IPP65R045C7XKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP65R045C7XKSA1 is a IPP65R045C7XKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 46A 45mΩ@24.9A,10V 227W [email protected] 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 46A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 45mΩ@24.9A,10V
  • Power Dissipation (Pd): 227W
  • Gate Threshold Voltage (Vgs(th)@Id): [email protected]
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 4.34nF@400V
  • Total Gate Charge (Qg@Vgs): 93nC@10V
  • Operating Temperature: -55℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 3.067 grams.

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Full Specifications of IPP65R045C7XKSA1

Model NumberIPP65R045C7XKSA1
Model NameInfineon Technologies IPP65R045C7XKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 46A 45mΩ@24.9A,10V 227W [email protected] 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:3.067 grams / 0.108185 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)46A
Drain Source On Resistance (RDS(on)@Vgs,Id)45mΩ@24.9A,10V
Power Dissipation (Pd)227W
Gate Threshold Voltage (Vgs(th)@Id)[email protected]
Type1PCSNChannel
Input Capacitance (Ciss@Vds)4.34nF@400V
Total Gate Charge (Qg@Vgs)93nC@10V
Operating Temperature-55℃~+150℃@(Tj)

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