IPP65R150CFDAAKSA1 by Infineon Technologies – Specifications

Infineon Technologies IPP65R150CFDAAKSA1 is a IPP65R150CFDAAKSA1 from Infineon Technologies, part of the MOSFETs. It is designed for 650V 22.4A 195.3W 150mΩ@9.3A,10V 4.5V@900uA 1PCSNChannel TO-220-3 MOSFETs ROHS. This product comes in a TO-220-3 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 22.4A
  • Power Dissipation (Pd): 195.3W
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@9.3A,10V
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@900uA
  • Type: 1PCSNChannel
  • Input Capacitance (Ciss@Vds): 2.34nF@100V
  • Total Gate Charge (Qg@Vgs): 86nC@10V
  • Operating Temperature: -40℃~+150℃@(Tj)

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 1 grams.

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Full Specifications of IPP65R150CFDAAKSA1

Model NumberIPP65R150CFDAAKSA1
Model NameInfineon Technologies IPP65R150CFDAAKSA1
CategoryMOSFETs
BrandInfineon Technologies
Description650V 22.4A 195.3W 150mΩ@9.3A,10V 4.5V@900uA 1PCSNChannel TO-220-3 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:1.000 grams / 0.035274 oz
Package / CaseTO-220-3
Package / ArrangeTube-packed
BatteryNo
ECCNEAR99
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)22.4A
Power Dissipation (Pd)195.3W
Drain Source On Resistance (RDS(on)@Vgs,Id)150mΩ@9.3A,10V
Gate Threshold Voltage (Vgs(th)@Id)4.5V@900uA
Type1PCSNChannel
Input Capacitance (Ciss@Vds)2.34nF@100V
Total Gate Charge (Qg@Vgs)86nC@10V
Operating Temperature-40℃~+150℃@(Tj)

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