IPP65R190CFD by Infineon Technologies – Specifications

Infineon Technologies IPP65R190CFD is a IPP65R190CFD from Infineon Technologies, part of the MOSFETs. It is designed for 650V 17.5A 190mΩ@10V,7.3A 151W 4.5V@730uA 1PCSNChannel TO-220 MOSFETs ROHS. This product comes in a TO-220 package and is sold as Tube-packed. Key features include:

  • Drain Source Voltage (Vdss): 650V
  • Continuous Drain Current (Id): 17.5A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 190mΩ@10V,7.3A
  • Power Dissipation (Pd): 151W
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@730uA
  • Type: 1PCSNChannel

Additional details: This product is environmentally friendly, does not contain a battery, and weighs approximately 2.826 grams.

More on IPP65R190CFD

Full Specifications of IPP65R190CFD

Model NumberIPP65R190CFD
Model NameInfineon Technologies IPP65R190CFD
CategoryMOSFETs
BrandInfineon Technologies
Description650V 17.5A 190mΩ@10V,7.3A 151W 4.5V@730uA 1PCSNChannel TO-220 MOSFETs ROHS
RoHSLead free / RoHS Compliant
UnitPiece
Weight:2.826 grams / 0.099684 oz
Package / CaseTO-220
Package / ArrangeTube-packed
BatteryNo
ECCN-
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)17.5A
Drain Source On Resistance (RDS(on)@Vgs,Id)190mΩ@10V,7.3A
Power Dissipation (Pd)151W
Gate Threshold Voltage (Vgs(th)@Id)4.5V@730uA
Type1PCSNChannel

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